지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2020.5
- 수록면
- 682 - 685 (4page)
이용수
초록· 키워드
오류제보하기
In this paper, we analyze the dominant noise source of conventional inductively degenerated common-source (CS) cascode low noise amplifier (LNA) when width and gate length of stacked transistors vary. Analytical MOSFET and its noise model are used to estimate the contributions of noise sources. All parameters are based on measured data of 60nm, 90nm and 130nm CMOS devices. Based on the noise analysis for different frequencies and device parameters including process nodes, the dominant noise source can be analyzed to optimize noise figure on the configuration. We verified analytically that the intuctively degenerated CS topology can not sustain its benefits in noise above a certain operation frequency of LNA over different process nodes.
목차
ABSTRACT
Ⅰ. Introduction
Ⅱ. Noise figure of cascode LNAs with Cgd consideration
Ⅲ. Noise Analysis
Ⅳ. Conclusion
REFERENCES
참고문헌 (8)
참고문헌 신청
A. M. Niknejad, S. Thyagarajan, E. Alon, Y. Wang, and C. Hull, A circuit designer's guide to 5G mm-wave. in Proceeding of IEEE Custom Integrated Circuits Conference (CICC), pp. 1-8, Sep. 2015.
X. S. Loo, Moe Z. Win, K. S. Yeo, “fT Enhancement of CMOS Transistor Using Isolated Polysilicon Gates.” in Proceeding of IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 76-79. 2018.
Y. Cheng, A study on figures of merit for high frequency behavior of MOSFETs in RF IC applications. in Proceeding of Workshop Compact Modeling, 2005.
I. Song, J. Jeon, H. S. Jhon, J. Kim, B. G. Park, J. D. Lee, and H. Shin, A simple figure of merit of RF MOSFET for low-noise amplifier design. IEEE Electron Device Letters, vol. 29, pp 1380-1382, 2008.
P. Qin, and X. Quan, Design of wideband LNA employing cascaded complimentary common gate and common source stages. IEEE microwave and wireless components letters, vol. 27, pp. 587-589, 2017.
X. S. Loo, Moe Z. Win, K. S. Yeo, “fT Enhancement of CMOS Transistor Using Isolated Polysilicon Gates.” in Proceeding of IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 76-79. 2018.
Y. Cheng, A study on figures of merit for high frequency behavior of MOSFETs in RF IC applications. in Proceeding of Workshop Compact Modeling, 2005.
I. Song, J. Jeon, H. S. Jhon, J. Kim, B. G. Park, J. D. Lee, and H. Shin, A simple figure of merit of RF MOSFET for low-noise amplifier design. IEEE Electron Device Letters, vol. 29, pp 1380-1382, 2008.
P. Qin, and X. Quan, Design of wideband LNA employing cascaded complimentary common gate and common source stages. IEEE microwave and wireless components letters, vol. 27, pp. 587-589, 2017.
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UCI(KEPA) : I410-ECN-0101-2020-004-000682320