Aspect ratio enhancement of ZnO nanowires using silicon microcavity

Kar, J.P.; Das, S.N.; Choi, J.H.; Lee, Y.A.; Lee, T.Y.; Myoung, J.M.

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자료유형: 학술대회자료

저자정보: Kar, J.P. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) Das, S.N. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) Choi, J.H. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) Lee, Y.A. (Nanobio Fusion Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University) Lee, T.Y. (Nanobio Fusion Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University) Myoung, J.M. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering)

저널정보: 한국재료학회 한국재료학회 학술발표대회 한국재료학회 2009년도 춘계학술발표대회

발행연도: 2009.1

수록면: 341 - 341 (1page)

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A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.

#ZnO #Nanowires #MOCVD #Etching

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Kar, J.P.

소속기관 Information and Electronic Materials Research Laboratory, Department of Materials Science and Engine