Reliable and High Spatial Resolution Method to Identify the Number of MoS<sub>2</sub> Layers Using a Scanning Electron Microscopy

Sharbidre, Rakesh Sadanand; Park, Se Min; Lee, Chang Jun; Park, Byong Chon; Hong, Seong-Gu; Bramhe, Sachin; Yun, Gyeong Yeol; Ryu, Jae-Kyung; Kim, Taik Nam

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자료유형: 학술저널

저자정보: Sharbidre, Rakesh Sadanand (Department of Material Science Engineering, Paichai University) Park, Se Min (Department of Material Science Engineering, Paichai University) Lee, Chang Jun (Division of Industrial Metrology, Korea Research Institute of Standards and Science) Park, Byong Chon (Division of Industrial Metrology, Korea Research Institute of Standards and Science) Hong, Seong-Gu (Division of Industrial Metrology, Korea Research Institute of Standards and Science) Bramhe, Sachin (Department of Material Science Engineering, Paichai University) Yun, Gyeong Yeol (Department of Material Science Engineering, Paichai University) Ryu, Jae-Kyung (Department of Dental Technology and Science, ShinHan University) Kim, Taik Nam (Department of Material Science Engineering, Paichai University)

저널정보: 한국재료학회 한국재료학회지 한국재료학회지 제27권 제12호

발행연도: 2017.1

수록면: 705 - 709 (5page)

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The electronic and optical characteristics of molybdenum disulphide ($MoS_2$) film significantly vary with its thickness, and thus a rapid and accurate estimation of the number of $MoS_2$ layers is critical in practical applications as well as in basic researches. Various existing methods are currently available for the thickness measurement, but each has drawbacks. Transmission electron microscopy allows actual counting of the $MoS_2$ layers, but is very complicated and requires destructive processing of the sample to the point where it will no longer be useable after characterization. Atomic force microscopy, particularly when operated in the tapping mode, is likewise time-consuming and suffers from certain anomalies caused by an improperly chosen set point, that is, free amplitude in air for the cantilever. Raman spectroscopy is a quick characterization method for identifying one to a few layers, but the laser irradiation causes structural degradation of the $MoS_2$. Optical microscopy works only when $MoS_2$ is on a silicon substrate covered with $SiO_2$ of 100~300 nm thickness. The last two optical methods are commonly limited in resolution to the micrometer range due to the diffraction limits of light. We report here a method of measuring the distribution of the number of $MoS_2$ layers using a low voltage field emission electron microscope with acceleration voltages no greater than 1 kV. We found a linear relationship between the FESEM contrast and the number of $MoS_2$ layers. This method can be used to characterize $MoS_2$ samples at nanometer-level spatial resolution, which is below the limits of other methods.

#$MoS_2$ #number of layers #scanning electron microscopy #contrast difference

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