핫 엠보싱용 점착방지막으로 사용되는 10nm급 두께의 Teflon-like 박막의 형성 및 특성평가

차남구; 김인권; 박창화; 임현우; 박진구

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자료유형: 학술저널

저자정보: 차남구 (한양대학교 마이크로바이오칩센터) 김인권 (한양대학교 마이크로바이오칩센터) 박창화 (한양대학교 마이크로바이오칩센터) 임현우 (한양대학교 마이크로바이오칩센터) 박진구 (한양대학교 마이크로바이오칩센터)

저널정보: 한국재료학회 한국재료학회지 한국재료학회지 제15권 제3호

발행연도: 2005.1

수록면: 149 - 154 (6page)

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연구결과

초록· 키워드

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Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

#nanoimprinting hot embossing #anti-stiction layer #chemical vapor deposition #AFM/LFM

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