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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.2
- 수록면
- 31 - 35 (5page)
- DOI
- 10.5207/JIEIE.2021.35.2.031
이용수
초록· 키워드
The device (IGBT) of the power converter for the voltage type HVDC MMC is mostly used for the high voltage 4500 [V] IGBT. The lifetime and reliability of IGBTs used in MMC (Modular Converter) is important. However, the power loss related parameters provided by the power semiconductor manufacturers are limited to specific temperature conditions. This results in an error between the simulation value and the measured value.
To verify this, the power loss of the power semiconductor was calculated under the conditions of use, the temperature change of the junction and case was simulated, and the power electronics (IGBT) was opened and measured with an infrared thermal camera to compare the simulated value with the measured value.
상세정보 수정요청해당 페이지 내 제목·저자·목차·페이지To verify this, the power loss of the power semiconductor was calculated under the conditions of use, the temperature change of the junction and case was simulated, and the power electronics (IGBT) was opened and measured with an infrared thermal camera to compare the simulated value with the measured value.
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목차
- Abstract
- 1. 서론
- 2. 본론
- 3. 결론
- References
참고문헌
참고문헌 신청최근 본 자료
UCI(KEPA) : I410-ECN-0101-2021-565-001481536
