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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.9
- 수록면
- 75 - 83 (9page)
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초록· 키워드
오류제보하기
The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V<SUB>oc</SUB>) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900°C declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO<SUB>x</SUB>/n<SUP>+</SUP>-poly-Si/ SiN<SUB>x</SUB>:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J<SUB>o</SUB> of this structure on polished surface is 1.3 fA/㎠ and for textured silicon surfaces is 3.7 fA/㎠ before printing the silver contacts. After printing the Ag contacts, the Jo of this structure increases to 50.7 fA/㎠ on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.
목차
ABSTRACT
1. Introduction
2. Fabrication of TOPCon solar cells
3. Background of the Progress
4. TOPCon Solar Cell Structure
5. Process of TOPCon Solar Cell
6. Conclusions
References
참고문헌 (33)
참고문헌 신청
Hermle, M. / 2017 / Silicon solar cells-current production and future concepts / Fraunhofer Institute for Solar Energy Systems ISE
Stenzel, F. / 2019 / Exceeding 23% and mass production of p-Cz Q. ANTUM bifacial solar cells / 36th European Photovoltaic Solar Energy Conference and Exhibition :96~99
Rahman, M. Z. / 2014 / Advances in surface passivation and emitter optimization techniques of c-Si solar cells / Renewable and Sustainable Energy Reviews 30:734~774
Feldmann, F. / 2014 / Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics / Solar energy materials and solar cells 120:270~274
Cousins, P.J. / 2010 / Generation 3: Improved performance at lower cost / 35th IEEE Photovoltaic Specialists Conference :000275~000278
Stenzel, F. / 2019 / Exceeding 23% and mass production of p-Cz Q. ANTUM bifacial solar cells / 36th European Photovoltaic Solar Energy Conference and Exhibition :96~99
Rahman, M. Z. / 2014 / Advances in surface passivation and emitter optimization techniques of c-Si solar cells / Renewable and Sustainable Energy Reviews 30:734~774
Feldmann, F. / 2014 / Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics / Solar energy materials and solar cells 120:270~274
Cousins, P.J. / 2010 / Generation 3: Improved performance at lower cost / 35th IEEE Photovoltaic Specialists Conference :000275~000278
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