Mapping Analysis of Single Crystal SiC Polytypes Grown From Purified β-SiC Powder

Jun Gyu Kim; Si Jung Park; Eunjin Jung; Younghee Kim; 최두진                                         /Doojin Choi

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자료유형: 학술저널

저자정보: Jun Gyu Kim Si Jung Park Eunjin Jung Younghee Kim 최두진 /Doojin Choi

저널정보: 대한금속·재료학회 Metals and Materials International Metals and Materials International Vol.20 No.4

발행연도: 2014.1

수록면: 687 - 693 (7page)

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The most important consideration when growing single crystal silicon carbide by the physical vapor transportmethod is to minimize defects. To minimize defects caused by temperature gradient, we used β phaseSiC powder, which has a low sublimation temperature, and purified the β phase SiC powder to improve thepurity of single crystal SiC. Furthermore, we performed thermodynamic computational simulations basedon compositions of purified and non-purified β-SiC powders to study the impact of metallic impuritieswithin SiC powder on the composition of single crystal SiC. We grew SiC at temperatures about 200 °C lowerthan the previous growth temperature using purified β-SiC powder and mapped the phase change behavior ofSiC according to different growth temperatures. Moreover, we compared and analyzed the characteristicsof SiC polytype formation and crystallinity according to growth temperature. We compared the distribution ofdefects and dislocations of single crystal 4H SiC grown from purified and non-purified β-SiC powder to studythe impact of source purification on defect generation. We also investigated the effect of metallic impurities onthe formation of defects and dislocations through content analysis of metallic impurities.

#β-SiC powder #purification #single crystal SiC #defect distributions #dislocation

참고문헌 (24)

참고문헌 신청

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