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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국정보통신학회JICCE Journal of information and communication convergence engineering Journal of information and communication convergence engineering Vol.13 No.1
- 발행연도
- 2015.3
- 수록면
- 56 - 61 (6page)
이용수
초록· 키워드
The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of highaspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100?150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.
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목차
- Abstract
- Ⅰ. INTRODUCTION
- Ⅱ. ELECTRON BEAM LITHOGRAPHY ON SU-8
- Ⅲ. NANOIMPRINT LITHOGRAPHY ON SU-8
- Ⅳ. CONCLUSIONS
- REFERENCES
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참고문헌 신청최근 본 자료
UCI(KEPA) : I410-ECN-0101-2023-004-000403730
