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논문 기본 정보

자료유형
학술저널
저자정보
Geun Jae Lee (Hankyong National University) Tae Jun Ahn (Hankyong National University) Sung Kyu Lim (Georgia Institute of Technology) Yun Seop Yu (Hankyong National University)
저널정보
한국정보통신학회JICCE Journal of information and communication convergence engineering Journal of information and communication convergence engineering Vol.20 No.2
발행연도
2022.6
수록면
137 - 142 (6page)

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초록· 키워드

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Monolithic three-dimensional (M3D) logics such as M3D-NAND, M3D-NOR, M3D-buffer, M3D 2×1 multiplexer, and M3D D flip-flop, consisting of modularized M3D inverters (M3D-INVs), have been proposed. In the previous M3D logic, each M3D logic had to be designed separately for a standard cell library. The proposed M3D logic is designed by placing modularized M3D-INVs and connecting interconnects such as metal lines or monolithic inter-tier-vias between M3D-INVs. The electrical characteristics of the previous and proposed M3D logics were simulated using the technology computer-aided design and Simulation Program with Integrated Circuit Emphasis with the extracted parameters of the previously developed LETI-UTSOI MOSFET model for n- and p-type MOSFETs and the extracted external capacitances. The area, propagation delay, falling/rising times, and dynamic power consumption of the proposed M3D logic are lower than those of previous versions. Despite the larger space and lower performance of the proposed M3D logic in comparison to the previous versions, it can be easily designed with a single modularized M3D-INV and without having to design all layouts of the logic gates separately.

목차

Abstract
I. INTRODUCTION
II. PROPOSED M3D LOGIC GATES
III. SIMULATION RESULTS
IV. CONCLUSION
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