Experimental Investigation on the Degradation of SiGe LNAs Under Different Bias Conditions Induced by 3MeV Proton Irradiation

Zhuoqi Li; Shuhuan Liu; Xiaotang Ren; Mathew Adefusika Adekoya; Jun Zhang; Shuangying Liu

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자료유형: 학술저널

저자정보: Zhuoqi Li (Xi'an Jiaotong University) Shuhuan Liu (Xi'an Jiaotong University) Xiaotang Ren (Proton Accelerator Laboratory, Peking University) Mathew Adefusika Adekoya (Xi'an Jiaotong University) Jun Zhang (Xi'an Jiaotong University) Shuangying Liu (Xi'an Jiaotong University)

저널정보: 한국원자력학회 Nuclear Engineering and Technology Nuclear Engineering and Technology 제54권 제2호

발행연도: 2022.2

수록면: 661 - 665 (5page)

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The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performanceunder different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in thispresent work. The S parameters including S11, S22, S21, 1 dB compression point and noise figure (NF) of thetest samples under different bias voltage supply were measured and compared before and after 3 MeVproton irradiation. The total proton irradiation fluence was 1 1015 protons/cm2. The maximumdegradation quantities of the gain S21 and NF of the test samples under zero bias are measuredrespectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximumdegradation of S21 and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation comparedwith those under normal bias supply. The key influence factors are discussed based on the correlation ofthe SiGe device and the LNA circuit. Different process of the ionization damage and displacement damageunder zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlyingphysical mechanisms are analyzed and investigated

#Proton irradiation damage #SiGe Low noise amplifier #Proton irradiation S parameters #Noise figure

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