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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.6
- 수록면
- 1 - 9 (9page)
- DOI
- 10.1186/s42649-021-00056-9
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초록· 키워드
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Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.
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참고문헌 (38)
참고문헌 신청
V. Adinolfi / 2019 / Composition-controlled atomic layer deposition of phase-change memories and ovonic threshold switches with high performance / ACS Nano 13:10440~10447
R. Arinero / 2013 / Temperature and damping effects on the frequency dependence of electrostatic force microscopy force gradients / J. Appl. Phys 114:214315
J. L. Bosse / 2014 / Nanosecond switching in GeSe phase change memory films by atomic force microscopy / Appl. Phys. Lett 104:053109
G. W. Burr / 2008 / Overview of candidate device technologies for storage-class memory / IBM J. Res. Dev 52:449~464
U. Celano / 2014 / Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices / Nano Lett 14:2401~2406
R. Arinero / 2013 / Temperature and damping effects on the frequency dependence of electrostatic force microscopy force gradients / J. Appl. Phys 114:214315
J. L. Bosse / 2014 / Nanosecond switching in GeSe phase change memory films by atomic force microscopy / Appl. Phys. Lett 104:053109
G. W. Burr / 2008 / Overview of candidate device technologies for storage-class memory / IBM J. Res. Dev 52:449~464
U. Celano / 2014 / Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices / Nano Lett 14:2401~2406
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