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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제18권 제3호
- 발행연도
- 2017.6
- 수록면
- 155 - 158 (4page)
- DOI
- https://doi.org/10.4313/TEEM.2017.18.3.155
이용수
초록· 키워드
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In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process,and their physical and electrical characteristics were analyzed. To lower the process temperature to 200℃, we used azinc nitrate hydrate (Zn(NO3)2·xH2O) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zincnitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at200℃. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and hightemperatureannealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate,ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-rayPhotoelectron Spectrometer (XPS), 200℃ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to havean amorphous phase and much more oxygen vacancy (Vo) than Zn-O bonds. Despite no crystallinity, the ZnO (N) hadconductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at 500℃ as in TFTs. Theseresults show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizingthe precursors.
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참고문헌 (16)
참고문헌 신청
Elvira M. C. Fortunato / 2004 / Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature / Applied Physics Letters 85(13):2541~2543
S. S. Shariffudin / 2012 / Effect of Film Thickness on Structural, Electrical, and Optical Properties of Sol-Gel Deposited Layer-by-layer ZnO Nanoparticles / Transactions on Electrical and Electronic Materials 13(2):102~105
Seung Min Oh / 2011 / Fabrication of 1 μm Thickness Lead Zirconium Titanate Films Using Poly(N-vinylpyrrolidone) Added Sol-gel Method / Transactions on Electrical and Electronic Materials 12(5):222~225
L.W. Wang / 2015 / Effects of Na content on structural and optical properties of Na-doped ZnO thin films prepared by sol–gel method / Journal of Alloys and Compounds 623:367~373
Sujin Sung / 2015 / Direct patterning of sol–gel metal oxide semiconductor and dielectric films via selective surface wetting / RSC Advances 5(48):38125~38129
S. S. Shariffudin / 2012 / Effect of Film Thickness on Structural, Electrical, and Optical Properties of Sol-Gel Deposited Layer-by-layer ZnO Nanoparticles / Transactions on Electrical and Electronic Materials 13(2):102~105
Seung Min Oh / 2011 / Fabrication of 1 μm Thickness Lead Zirconium Titanate Films Using Poly(N-vinylpyrrolidone) Added Sol-gel Method / Transactions on Electrical and Electronic Materials 12(5):222~225
L.W. Wang / 2015 / Effects of Na content on structural and optical properties of Na-doped ZnO thin films prepared by sol–gel method / Journal of Alloys and Compounds 623:367~373
Sujin Sung / 2015 / Direct patterning of sol–gel metal oxide semiconductor and dielectric films via selective surface wetting / RSC Advances 5(48):38125~38129
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