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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제19권 제3호
- 발행연도
- 2018.6
- 수록면
- 218 - 221 (4page)
- DOI
- https://doi.org/10.1007/s42341-018-0042-8
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초록· 키워드
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High-performance oxide semiconductor thin-fi lm transistors (TFTs) have been fabricated with 1 wt% silicon-doped indiumzinc oxide (1SIZO). The channel layer of the 1SIZO TFTs was deposited by radio frequency sputtering at room temperature.
To investigate the eff ect of annealing on the electrical and structural properties of the TFTs, the annealing temperature wasvaried between 100 and 500 °C. As the annealing temperature increases from 100 to 300 °C, the crystal structure of the1SIZO fi lm showed an amorphous phase. However, for the 1SIZO fi lm annealed at 500 °C, the structure of 1SIZO clearlyshowed a transition from amorphous to polycrystalline. The transfer curve was negative shifted as the annealing temperatureincreased. Further, at the annealing temperature of 400 °C, the 1SIZO TFT became conductive and the off current disappears.
This can be attributed to the increase in carrier concentration due to the high annealing temperatures. The electricalproperties of optimized 1SIZO TFTs, such as a fi eld-eff ect mobility (μ FE ) of 13.05 cm 2 /V s, an on/off current ratio (I ON/OFF )of 4.94 × 10 8 , and a subthreshold swing of 0.37 V/decade have been obtained for high performance at the low annealingtemperature of 100 °C.
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참고문헌 (16)
참고문헌 신청
K. Nomura / 2004 / Nature 432:488
H. Hosono / 2006 / J. Non-Cryst. Solids 352:851
정유진 / 2011 / Effect of oxygen on the threshold voltage of a-IGZO TFT / Journal of Electrical Engineering & Technology 6(4):539~542
P. Barquinha / 2007 / Thin Solid Films 515:8450
S.Y. Park / 2013 / IEEE Electron Device Lett. 34:894
H. Hosono / 2006 / J. Non-Cryst. Solids 352:851
정유진 / 2011 / Effect of oxygen on the threshold voltage of a-IGZO TFT / Journal of Electrical Engineering & Technology 6(4):539~542
P. Barquinha / 2007 / Thin Solid Films 515:8450
S.Y. Park / 2013 / IEEE Electron Device Lett. 34:894
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