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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.32 No.3
- 발행연도
- 2023.5
- 수록면
- 73 - 76 (4page)
이용수
초록· 키워드
Efficient hole injection is crucial for the optimal functioning of organic light-emitting diodes (OLEDs), which require an anode system with a high work function. MoO₃ is commonly used for the hole injection layer (HIL) in OLEDs owing to its significantly high work function. However, the work function of the MoO₃ layer varies with thickness, which can affect the position of the highest occupied molecular orbital (HOMO) of the adjacent organic hole transport layer. Therefore, it is essential to understand the energy-level alignment of MoO₃ HILs with different thicknesses to design an efficient OLED structure. In this study, the energy-level alignment of indium tin oxide (ITO)/MoO₃ (20 nm)/N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) interfaces was investigated using in situ X-ray and ultraviolet photoelectron spectroscopy, and the results were compared with those of the ITO/MoO₃ (5 nm)/NPB interfaces. The 20 nm thick MoO₃ layer exhibited a high work function, leading to a significant decrease in the NPB HOMO level. These findings suggest that a sufficiently thick MoO₃ HIL is necessary to achieve optimal energy-level alignment and enhance the hole injection properties in OLEDs.
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목차
- 1. Introduction
- 2. Experimental details
- 3. Results and discussion
- 4. Conclusion
- References
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UCI(KEPA) : I410-ECN-0102-2023-420-001904812
