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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.6
- 수록면
- 47 - 52 (6page)
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Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10<SUP>1</SUP>~10<SUP>4</SUP> counts. The silicon isotopes matrix element was measured from ptype silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10<SUP>19</SUP>~10<SUP>21</SUP> atoms/cm<SUP>3</SUP>. The technique will be useful for estimating distribution
목차
Abstract
Introduction
Experimental
Results and Discussion
Conclusion
References
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