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초록·키워드
Purpose: This study aims to organize systematically, in chronological order, the methods and test conditions utilized for the lifetime assessment of gallium nitride (GaN) high electron mobility transistors (HEMTs) within the reliability criteria, as discussed in various research literature.
Methods: Firstly, the study examines the structure and degradation causes of GaN HEMTs, detailing methods that have enhanced their reliability. It then introduces stress factors crucial for a life test and categorizes approaches found in the literature for assessing device lifetimes, comparing each test condition and result using a graph.
Results: Across the literature, temperature-accelerated stress tests were predominant for deriving the mean time to failure (MTTF), commonly applying the Arrhenius model. On average, less than 20 samples are used, with a test duration of approximately 2000 hours and a test channel temperature above 150 degrees Celsius. Consequently, the activation energy (Ea) exceeds 1 eV, estimating the MTTF to be over 105 hours.
Conclusion: In radio frequency (RF) applications, GaN HEMTs, when considering degradation causes, are suitably evaluated for lifetime using the RF method to simulate real-world environments while applying stress due to voltage and temperature. Accordingly, a future consensus on an integrated approach to lifetime evaluation for these devices is needed.
Methods: Firstly, the study examines the structure and degradation causes of GaN HEMTs, detailing methods that have enhanced their reliability. It then introduces stress factors crucial for a life test and categorizes approaches found in the literature for assessing device lifetimes, comparing each test condition and result using a graph.
Results: Across the literature, temperature-accelerated stress tests were predominant for deriving the mean time to failure (MTTF), commonly applying the Arrhenius model. On average, less than 20 samples are used, with a test duration of approximately 2000 hours and a test channel temperature above 150 degrees Celsius. Consequently, the activation energy (Ea) exceeds 1 eV, estimating the MTTF to be over 105 hours.
Conclusion: In radio frequency (RF) applications, GaN HEMTs, when considering degradation causes, are suitably evaluated for lifetime using the RF method to simulate real-world environments while applying stress due to voltage and temperature. Accordingly, a future consensus on an integrated approach to lifetime evaluation for these devices is needed.
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