개인구독
소속 기관이 없으신 경우, 개인 정기구독을 하시면 저렴하게
논문을 무제한 열람 이용할 수 있어요.
지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.24 No.2
- 발행연도
- 2024.4
- 수록면
- 96 - 104 (9page)
- DOI
- 10.5573/JSTS.2024.24.2.96
이용수
초록· 키워드
오류제보하기
The research investigates the electrical effect of Work Function Variation (WFV) in Tunnel Field-Effect Transistors (TFETs), with Titanium Nitride (TiN) gate as a common Metal Gate material. Employing advanced Machine Learning (ML) techniques, this study seeks to establish causal relationships among various parameters, optimize ML models, and predict exceptional scenarios. Through an in-depth analysis of diverse data, the study uncovers insights into TFET’s performance variations. The ML model was optimized using the elimination method, checking each R² value. After discovering the relevant output parameters (e.g., turn-on voltage (V<SUB>on</SUB>), threshold voltage (V<SUB>th</SUB>)), it was observed that WFV at particular gate regions heavily affects current variation. Furthermore, ML demonstrated the ability to predict output parameters for exceptional cases, not present in the training data, such as gates composed of the 4.4-eV grain, which exhibited a high R² value (0.9927).
목차
Abstract
I. INTRODUCTION
II. DEVICE DESIGN AND METHODOLOGY
III. FINDING THE DETAILED CAUSE
IV. MULTIPLE CAUSES OF VARIATION
V. PREDICTION OF EXCEPTIONAL SITUATION
VI. CONCLUSIONS
REFERENCES
참고문헌 (28)
참고문헌 신청
C.-T. Sah, “Characteristics of the metal-oxide-semiconductor transistors,” IEEE Trans. Electron Devices, Vol. 11, No. 7, pp. 324-345, 1964.
Q. Zhang, W. Zhao, and A. Seabaugh, “Low-subthreshold-swing tunnel transistors,” IEEE Electron Device Lett., Vol. 27, No. 4, pp. 297-300, 2006.
J. H. Kim, S. Kim, and B.-G. Park, “Double-gate TFET with vertical channel sandwiched by lightly doped Si,” IEEE Trans. Electron Devices, Vol. 66, No. 4, pp. 1656-1661, 2019.
A. C. Seabaugh and Q. Zhang, “Low-voltage tunnel transistors for beyond CMOS logic,” Proc. IEEE, Vol. 98, No. 12, pp. 2095-2110, 2010.
R. Gandhi, Z. Chen, N. Singh, K. Banerjee, and S. Lee, “Vertical Si-Nanowire $ n $-Type Tunneling FETs With Low Subthreshold Swing (≤ 50 [mV/decade] at Room Temperature,” IEEE Electron Device Lett., Vol. 32, No. 4, pp. 437-439, 2011.
Q. Zhang, W. Zhao, and A. Seabaugh, “Low-subthreshold-swing tunnel transistors,” IEEE Electron Device Lett., Vol. 27, No. 4, pp. 297-300, 2006.
J. H. Kim, S. Kim, and B.-G. Park, “Double-gate TFET with vertical channel sandwiched by lightly doped Si,” IEEE Trans. Electron Devices, Vol. 66, No. 4, pp. 1656-1661, 2019.
A. C. Seabaugh and Q. Zhang, “Low-voltage tunnel transistors for beyond CMOS logic,” Proc. IEEE, Vol. 98, No. 12, pp. 2095-2110, 2010.
R. Gandhi, Z. Chen, N. Singh, K. Banerjee, and S. Lee, “Vertical Si-Nanowire $ n $-Type Tunneling FETs With Low Subthreshold Swing (≤ 50 [mV/decade] at Room Temperature,” IEEE Electron Device Lett., Vol. 32, No. 4, pp. 437-439, 2011.
이 논문과 함께 이용한 논문
Design Optimization of L-Shaped Gate Negative Capacitance Si/Ge Heterojunction TFET With Channel Doping
Xinfeng Zheng
,
Weifeng Lü
,
Yubin Wang
외 2명
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2025
.02
개선된 성능을 위해 포켓이 추가된 Hetero-gate TFET 구조
최윤서
,
김광수
대한전자공학회 학술대회
2023
.06
터널링 전계효과 트랜지스터 4종류 특성 비교
심언성
,
안태준
,
유윤섭
한국정보통신학회논문지
2017
.05
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-151-24-02-089667983