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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.33 No.6
- 발행연도
- 2024.11
- 수록면
- 189 - 192 (4page)
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초록· 키워드
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An experimental study of an interband cascade (IC) photodetector based on an InAs/GaSb type II superlattice for mid-wavelength infrared detection is reported. The optical and electrical performance of the fabricated device was investigated at different temperatures, ranging from low temperatures to room temperature. The cutoff wavelengths of the IC photodiode were measured to be 4.0 and 4.8 𝜇m at 77 and 300 K, respectively. The dark current density and differential resistance-area product measured under a bias of −0.1 V were 1.7 × 10<sup>−7</sup> A/㎠ and 295,787 Ω ㎠ at 77 K. The detectivity of the photodiode was found to be 6.2 × 10<sup>10</sup> cm·Hz<sup>1/2</sup>/W at 77 K under zero bias. Under low bias and low temperature, the dark current characteristics exhibited almost saturated behavior with minor variation.
목차
ABSTRACT
1. Introduction
2. Experiments and discussion
3. Conclusion
References
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