메뉴 건너뛰기
소속 기관 / 학교 인증
인증하면 논문, 학술자료 등을  무료로 열람할 수 있어요.
한국대학교, 누리자동차, 시립도서관 등 나의 기관을 확인해보세요
(국내 대학 90% 이상 구독 중)
고객센터 ENG
주제분류

논문 기본 정보

저자정보
(Myongji University) (Myongji University) (Myongji University)
저널정보
한국생산제조학회 한국생산제조학회지 한국생산제조학회지 Vol.34 No.5
오류 신고하기

피인용 0

검색

    초록·키워드

    Electrostatic discharge and particle contamination caused by static electricity contribute to yield loss during semiconductor manufacturing. Using insulating materials in process equipment causes static charge accumulation. Even small amounts of static charge can severely damage metal lines, gate oxides, or insulating layers. Although corona ionizers are widely adopted to control such issues, their performance is highly sensitive to installation conditions, including the position, angle, distance, and airflow. Improper conditions cause ion imbalance, fuzzball particle formation, and metal spattering, potentially leading to wafer defects that reduce the overall yield. Here, the correlation between fuzzball particles and wafer defects is verified using scanning electron microscopy and defect mapping. Root causes are identified and optimization strategies are suggested by evaluating ionizer installation angles and offsets within equipment front end modules and quantitatively measuring charge and discharge performance. The results provide foundational data for standardizing ionizer installation and improving process yields .

    최근 본 자료 전체보기

      UCI(KEPA) : I410-151-26-02-094347390