인문학
사회과학
자연과학
공학
의약학
농수해양학
예술체육학
복합학
DBpia AI
AI 에이전트
AI 아이디어
AI 리더
AI 뷰어
Citeasy
크롬 서지관리 다운로드
개인구독
소속 기관이 없으신 경우, 개인 정기구독을 하시면 저렴하게
논문을 무제한 열람 이용할 수 있어요.
지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 저자정보
피인용 0
초록·키워드
Selective etching of GaN over AlGaN is a critical process step in GaN-based high electron mobility transistor (HEMT) fabrication, where precise removal of GaN is required without damaging the thin AlGaN barrier. In this study, we developed a high-selectivity, low-damage etching process using a customized BCl₃/SF<sub>6</sub> inductively coupled plasma reactive ion etching (ICP-RIE) system. Specifically, a 27.12 MHz helical resonance ICP source was utilized to generate high-density radicals and maximize gas dissociation efficiency, while the substrate temperature was precisely controlled using an external oil-circulating bath. The effects of gas composition and substrate temperature on etch rates, selectivity, and surface properties were systematically investigated. By optimizing the gas ratio to 30% SF<sub>6</sub>, a record-high GaN-over-AlGaN selectivity of 78:1 was obtained while maintaining a fast GaN etch rate. Temperature-dependent studies revealed that Al-F passivation was stable at low temperatures, whereas it degraded above 40 ℃, resulting in a significant decrease in selectivity. Although low temperatures enhanced passivation, they also promoted AlCl₃ residue oxidation, resulting in unintended surface roughening. At an intermediate temperature of ∼30℃, the etched surface exhibited the best overall characteristics, including smooth morphology, stable chemical states, and minimized leakage current. These results demonstrate that selective, high-throughput, and low-damage GaN etching can be realized by combining optimized BCl₃/SF<sub>6</sub> chemistry with precise substrate temperature control and high-frequency ICP operation.
본문·목차
인공지능 문자 인식 모델을 통해 추출된 텍스트로, 일부 오타나 오류가 포함될 수 있으나 지속적으로 개선 중입니다.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
최근 본 자료 전체보기
UCI(KEPA) : I410-151-26-02-096406801
