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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2026.3
- 수록면
- 182 - 187 (6page)
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초록· 키워드
This study presents an approach to improve the contact resistivity of AlGaN/GaN high-electron-mobility transistors (HEMTs) by introducing hole etching in the ohmic contact (HEO) region. Inductively coupled plasma reactive ion etching was employed to form holes in the AlGaN barrier layer, and the etching characteristics were systematically investigated to optimize the hole formation conditions. In addition, UV/O₃ surface treatment was applied to further modify the contact interface. Electrical characterization shows that the HEMTs with hole-etched ohmic regions exhibit significantly reduced contact resistivity compared with conventional devices. The proposed technique effectively enhances carrier injection at the metal/semiconductor interface, leading to improved device performance. These results demonstrate that the HEO technique provides a practical and reliable strategy for reducing contact resistance and improving the electrical characteristics of AlGaN/GaN HEMTs.
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목차
- Abstract
- Ⅰ. Introduction
- Ⅱ. Methods
- Ⅲ. Results and discussion
- Ⅳ. Conclusion
- References
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