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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전자파학회JEES Journal of Electromagnetic Engineering And Science Journal of Electromagnetic Engineering And Science Vol.26 No.3
- 발행연도
- 2026.5
- 수록면
- 246 - 255 (10page)
이용수
초록· 키워드
This work introduces a simulation-driven framework for reliably reproducing experimental trends pertaining to two-dimensional thin films, thus rendering advanced heterostructure research feasible for facilities without sophisticated equipments. Zhang and his colleagues fabricated a molybdenum disulfide (MoS₂) device in a ground-signal-ground (G-S-G) configuration and derived its equivalent electrical circuit. This research simulates a MoS₂-graphene based coplanar transmission line (CPTL) in a G-S-G configuration using Ansys HFSS. Thereafter an accurate equivalent electrical model circuit was designed and calculated for its hetero-junction device using Advance Design System simulator. For validation the characteristic curves of the simulated and modeled devices are compared with the measurements obtained for the metallic MoS₂ proposed by Zhang and his colleagues, which are used in this study for validation purposes rather than as a foundation for the proposed model. The validation results confirms that the proposed simulation method can consistently replicate experimental trends. Furthermore, the effect of the combined properties of MoS₂ and graphene on performance is evaluated based on Sparameters, and its high-frequency behavior is assessed through scattering parameter analysis (S<sub>11</sub>, S<sub>21</sub>), particularly at 5.9 GHz. Among the four different configurations assessed in this study, the one with the graphene monolayer positioned on the source side of the MoS₂ signal line exhibited improved high-frequency performance in terms of I–V and C–V characteristics, as well as a low parasitic effect. Therefore, it can potentially be utilized in future devices and next-generation Wi-Fi spectra.
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목차
- Abstract
- I. INTRODUCTION
- II. SIMULATION FRAMEWORK FOR MoS₂-GRAPHENE ENABLED HETEROJUNCTION
- III. HIGH-FREQUENCY CHARACTERIZATION AND MODELING BASED ON SIMULATED S-PARAMETERS
- IV. CONCLUSION
- REFERENCES
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