메뉴 건너뛰기
소속 기관 / 학교 인증
인증하면 논문, 학술자료 등을  무료로 열람할 수 있어요.
한국대학교, 누리자동차, 시립도서관 등 나의 기관을 확인해보세요
(국내 대학 90% 이상 구독 중)
고객센터 ENG
주제분류

논문 기본 정보

저자정보
(Seoul National University of Science and Technology) (Seoul National University of Science and Technology)
저널정보
대한전자공학회 IEIE Transactions on Smart Processing & Computing IEIE Transactions on Smart Processing & Computing Vol.15 No.4
오류 신고하기

피인용 0

검색

    초록·키워드

    This paper presents the design of a bipolar current-mode stimulator integrated circuit (IC) for implantable prosthetic devices using 0.18-μm standard CMOS process. The proposed stimulator IC is capable of delivering up to 1-mA current through 10-kΩ load using 12.8 V supply voltage. The output impedance of the stimulator is enhanced by utilizing a regulated cascode output current driver stage, which achieves a voltage compliance of 12.4 V. In order to allow low-voltage standard transistors to operate reliably at high voltage, transistor stacking and dynamic gate biasing techniques are used. In addition, a simple active charge balancing circuit is included to achieve minimal net charge after stimulation cycle is complete. The overall layout area is 0.12 mm².

    최근 본 자료 전체보기