인문학
사회과학
자연과학
공학
의약학
농수해양학
예술체육학
복합학
DBpia AI
AI 에이전트
AI 아이디어
AI 리더
AI 뷰어
Citeasy
크롬 서지관리 다운로드
지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록·키워드
Silicon carbide (SiC) is renowned for its exceptional hardness, thermal conductivity, chemical stability, and wear resistance. However, the existing process is difficult to meet the high standards of uniform corrosion in its polishing process and surface roughness and flatness after polishing, new polishing fluids and technique optimization are crucial for development. The study optimized and validated the composition of the polishing fluid used in ultrasonic-assisted chemical-mechanical polishing (UACMP). Abrasives significantly influenced the material removal rate (MRR) and surface roughness (Ra), contributing 67.63% and 56.43%, respectively. Organic bases and pH buffers significantly affected Ra, accounting for 19.66% and 21.44%, respectively. The optimum composition was determined, consisting of triethylamine (3wt%), potassium hydrogen phthalate (1wt%), a composite of silica and alumina abrasive particles (5wt%), and hydrogen peroxide (6wt%), which reduced the Ra from 95 nm to 3 nm. The MRR achieved 25.96 nm/min. In comparison to the 7 nm minimum roughness from the orthogonal test, the optimal scheme's Ra was reduced by 57.14%, leading to a significant enhancement in overall surface quality. In this paper, a new type of additive is added to prepare the polishing liquid, which provides a new idea for the UACMP of SiC and has a great impact.
인공지능 문자 인식 모델을 통해 추출된 텍스트로, 일부 오타나 오류가 포함될 수 있으나 지속적으로 개선 중입니다.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
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