인문학
사회과학
자연과학
공학
의약학
농수해양학
예술체육학
복합학
DBpia AI
AI 에이전트
AI 아이디어
AI 리더
AI 뷰어
Citeasy
크롬 서지관리 다운로드
지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록·키워드
Abstract Transition Metal Dichalcogenides (TMDCs) are promising semiconductor alternatives to silicon in CMOS technology. Their layered nature allows scaling to a single layer (1L) without degrading electrical performance, enabling further miniaturization of field‐effect transistors (FETs). TMDCs like WSe 2 exhibit ambipolar transport, allowing fabrication of both p ‐type and n ‐type devices on a single flake, simplifying circuit design. Ambipolar, large‐area, high‐quality 1L‐WSe 2 is therefore highly desirable. Here, centimeter‐scale exfoliated 1L‐WSe 2 is achieved, reaching 1L areas of up to 20 mm 2 via thermally activated gold‐mediated TMDC exfoliation using large, high‐quality WSe₂ parent crystals. The quality of 1L‐WSe2 is comprehensively investigated via Raman spectroscopy, photoluminescence, X‐ray, and ultraviolet photoelectron spectroscopy, as well as electronic transport measurements. For the latter, 1L‐WSe 2 ‐based FETs are fabricated on lithium‐ion conducting glass ceramic substrates serving as both supporting substrate and high‐performance gate. Subthreshold slopes as steep as 30 and 50 mV dec −1 , maximum mobilities of 15 and 18 cm 2 V⁻¹ s⁻¹, and ON/OFF ratios of ≈10 8 and 10 9 for electron and hole currents, respectively, are achieved at ultra‐low gate voltages (≈2 V). The performance, demonstrated across 15 devices, suggests that 1L‐WSe 2 in this device architecture can pave the way toward providing an alternative to conventional silicon‐based CMOS technology for innovative, further miniaturized devices.
인공지능 문자 인식 모델을 통해 추출된 텍스트로, 일부 오타나 오류가 포함될 수 있으나 지속적으로 개선 중입니다.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
오류를 발견하셨다면 해당 부분을 드래그한 후 ' 를 통해 신고해주세요.
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