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논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 김종수
- 발행연도
- 2013
- 저작권
- 영남대학교 논문은 저작권에 의해 보호받습니다.
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We have studied the quantum dot (QD) size effects in the optical and electrical properties of InAs/GaAs QD solar cells (QDSCs). The QDSCs were grown by molecular beam epitaxy.
To investigate QD size effects in the solar cell efficiencies and the surface/ p-n junction electric fields of QDSCs, we fabricate QDSCs with different QD sizes by changing of the total amount of InAs deposition (0 ∼ 3.0 ML).
In the photoreflctance (PR) spectra of QDSCs, we found Franz-Keldysh oscillations (FKOs) due to the existence of surface and p-n junction electric fields of QDSCs. As a increasing the QD size, the periods of FKOs were changed due to the modification of electric fields caused by the existence of strain fields and dislocation in the InAs/GaAs interface.
In electrical properties measurement, we found that the efficiencies of QDSCs were strongly depend on the QD size. In QD size dependence experiment, we achieved the maximum efficiency of 21% at 2.0 ML InAs QD. We also found that when the QD size is larger than 2.0 ML the solar cell efficiencies are decreased. It could be explained by the effect of the defect generation in relatively largest QD caused by strain induced dislocation of InAs/GaAs interface. The defects affect the reverse saturation current density (J0) and an ideality factor (n).
To investigate QD size effects in the solar cell efficiencies and the surface/ p-n junction electric fields of QDSCs, we fabricate QDSCs with different QD sizes by changing of the total amount of InAs deposition (0 ∼ 3.0 ML).
In the photoreflctance (PR) spectra of QDSCs, we found Franz-Keldysh oscillations (FKOs) due to the existence of surface and p-n junction electric fields of QDSCs. As a increasing the QD size, the periods of FKOs were changed due to the modification of electric fields caused by the existence of strain fields and dislocation in the InAs/GaAs interface.
In electrical properties measurement, we found that the efficiencies of QDSCs were strongly depend on the QD size. In QD size dependence experiment, we achieved the maximum efficiency of 21% at 2.0 ML InAs QD. We also found that when the QD size is larger than 2.0 ML the solar cell efficiencies are decreased. It could be explained by the effect of the defect generation in relatively largest QD caused by strain induced dislocation of InAs/GaAs interface. The defects affect the reverse saturation current density (J0) and an ideality factor (n).
목차
- 1. 서론 ········································································· 12. 이론 ········································································· 42. 1 양자점 태양전지 ······················································· 42. 2 양자점 크기에 따른 효과 ············································ 102. 3 Photoreflectance spectronscopy ··································· 152. 4 양자점 태양전지의 소자 특성 ······································· 172. 5 분광 반응도 ·························································· 203. 실험 ······································································· 213. 1 MBE를 이용한 시료 성장 ··········································· 213. 1. 1 GaAs 단일 접합 태양전지 ····································· 213. 1. 2 InAs/GaAs 양자점 태양전지 ·································· 233. 2 양자점 태양전지 단위 공정 ········································· 253. 3 Photoreflectance spectronscopy ··································· 273. 4 양자점 태양전지 I-V 측정 ·········································· 283. 5 분광반응도(Spectral response) 측정 ······························· 294. 결과 및 논의 ······························································ 304. 1 GaAs 단일 접합 태양전지의 전기적 특성 평가 ··················· 304. 2 양자점 태양전지의 광학적 특성 평가 ······························ 334. 2 양자점 태양전지의 전기적 특성 평가 ······························ 465. 요약 및 결론 ······························································ 53참고문헌 ······································································· 55영문요약 ······································································· 58
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