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자료유형
학술저널
저자정보
저널정보
대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.1 No.3
발행연도
2006.9
수록면
366 - 370 (5page)

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초록· 키워드

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We investigated the negative differential resistance (NDR) property of self-assembled 4,4-di(ethynylphenyl)-2'-nitro-l-(thioacetyl)benzene ("nitro-benzene"), which has been well known as a conducting molecule [1]. Self-assembly mono layers (SAMs) were prepared on Au (111), which had been thermally deposited onto pre-treated (H₂SO₄: H₂O₂=3:1) Si. The Au substrate was exposed to a 1 mM solution of l-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing of the sample, it was exposed to a 0.1 μM solution of nitro-benzene in dimethylformamide (DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. Following the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and CH₂Cl₂, and finally blown dry with N₂. Under these conditions, we measured the electrical properties of SAMs using ultra high vacuum scanning tunneling microscopy (UHV-STM) and scanning tunneling spectroscopy (STS) [2]. As a result, we confirmed the properties of NDR in between the positive and negative region.

목차

Abstract
1. Introduction
2. Experiment
3. Results and Discussion
4. Conclusion
Acknowledgements
References

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