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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
이용수
초록· 키워드
오류제보하기
Surface roughness of deposited or etched film strongly depends on ion bombardment. Relationships between ion bombardment variables and surface roughness are too complicated to model analytically. To overcome this, an empirical neural network model was constructed and applied to a deposition process of silicon nitride(SiN) films. The films were deposited by using a pulsed plasma enhanced chemical vapor deposition system in SiH₄?NH₄ plasma. Radio frequency source power and duty ratio were varied in the range of 200-800 W and 40-100%. A total of 20 experiments were conducted. A non-invasive ion energy analyzer was used to collect ion energy distribution. The diagnostic variables examined include high (or) low ion energy and high (or low) ion energy flux. Mean surface roughness was measured by using atomic force microscopy. A neural network model relating the diagnostic variables to the surface roughness was constructed and its prediction performance was optimized by using a genetic algorithm. The optimized model yielded an improved performance of about 58% over statistical regression model. The model revealed very interesting features useful for optimization of surface roughness. This includes a reduction in surface roughness either by an increase in ion energy flux at lower ion energy or by an increase in higher ion energy at lower ion energy flux.
목차
Abstract
1. 서론
2. 실험 데이터
3. 신경망 모델링
4. 결과
후기
참고문헌
참고문헌 (12)
참고문헌 신청
1. [학술지(정기간행물)] - P. Temple-Boyer / 2000 / / J. Vac. Sci. Technol. A 18 : 2389 ~
2. [학술지(정기간행물)] - M. Orfert / 1999 / / Surf. Coat. Technol. 116 : 622 ~
3. [학술지(정기간행물)] - 김병환 / 2008 / Room-Temperature High Radio-Frequency Source Power Effects on Silicon Nitride Films Deposited by using a Plasma-Enhanced Chemical Vapor Deposition / Metals and Materials International 14 (5) : 637 ~ 641
4. [학술지(정기간행물)] - 김수연 / 2009 / Radio Frequency Bias Power Effects on Silicon Nitride Film Deposited in SiH4-NH3 using a Plasma-Enhanced Chemical Vapor Deposition / Metals and Materials International 15 (5) : 881 ~ 885
5. [학술지(정기간행물)] - B. Kim / 2009 / / Thin Solid Films 517 : 4090 ~
2. [학술지(정기간행물)] - M. Orfert / 1999 / / Surf. Coat. Technol. 116 : 622 ~
3. [학술지(정기간행물)] - 김병환 / 2008 / Room-Temperature High Radio-Frequency Source Power Effects on Silicon Nitride Films Deposited by using a Plasma-Enhanced Chemical Vapor Deposition / Metals and Materials International 14 (5) : 637 ~ 641
4. [학술지(정기간행물)] - 김수연 / 2009 / Radio Frequency Bias Power Effects on Silicon Nitride Film Deposited in SiH4-NH3 using a Plasma-Enhanced Chemical Vapor Deposition / Metals and Materials International 15 (5) : 881 ~ 885
5. [학술지(정기간행물)] - B. Kim / 2009 / / Thin Solid Films 517 : 4090 ~
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UCI(KEPA) : I410-ECN-0101-2010-581-002439700