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논문 기본 정보

자료유형
학술저널
저자정보
Jae-hoon Choi (고려대학교) Xueqiu You (고려대학교) Chul Kim (고려대학교) Jungil Park (고려대학교) James Jungho Pak (고려대학교)
저널정보
대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.5 No.4
발행연도
2010.11
수록면
640 - 645 (6page)

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초록· 키워드

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This paper describes the power generating property of hydrothermally grown ZnO nanorods on a flexible polyethersulfone (PES) substrate. The piezoelectric currents generated by the ZnO nanorods were measured when bending the ZnO nanorod by using I-AFM, and the measured piezoelectric currents ranged from 60 to 100 pA. When the PtIr coated tip bends a ZnO nanorod, piezoelectrical asymmetric potential is created on the nanorod surface. The Schottky barrier at the ZnO-metal interface accumulates elecntrons and then release very quickly generating the currents when the tip moves from tensile to compressed part of ZnO nanorod. These ZnO nanorods were grown almost vertically with the length of 300-500 ㎚ and the diameter of 30-60 ㎚ on the Ag/Ti/PES substrate at 90℃ for 6 hours by hydrothermal method. The metal-semiconductor interface property was evaluated by using a HP 4145B Semiconductor Parameter Analyzer and the piezoelectric effect of the ZnO nanorods were evaluated by using an I-AFM. From the measured I-V characteristics, it was observed that ZnO-Ag and ZnO-Au metal-semiconductor interfaces showed an ohmic and a Schottky contact characteristics, respectively. ANSYS finite element simulation was performed in order to understand the power generation mechanism of the ZnO nanorods under applied external stress theoretically.

목차

Abstract
1. Introduction
2. Experiments
3. Results and Discussion
4. Conclusion
Acknowledgements
References

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UCI(KEPA) : I410-ECN-0101-2012-560-003619978