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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2012.9
- 수록면
- 27 - 34 (8page)
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This paper presents the impact of time dependent dielectric breakdown (TDDB, also called as gate oxide breakdown) failure on nanoscale digital CMOS Circuits. Recently, TDDB for ultra-thin gate oxides has been considered as one of the critical reliability issues which can lead to performance degradation or logic failures in nanoscale CMOS devices. Also, leakage power in the standby mode can be increased significantly. In this paper, TDDB aging effects on large CMOS digital circuits in the 45nm technology are analyzed. Simulation results show that TDDB effect on MOSFET circuits can result in more significant increase of power consumption compared to delay increase.
목차
Abstract
1. Introduction
2. TDDB Modeling
3. TDDB Impact on Digital Circuits
4. Simulation Results
5. Conclusion
References
참고문헌 (13)
참고문헌 신청
3. [학술대회논문] - A. B. Kahng / 2007 / Design challenges at 65nm and beyond / Proceeding of IEEE DATE Conference : 1 ~ 2
4. [학술대회논문] - J. W. McPherson / 2006 / Reliability challenges for 45nm and beyond / Proceeding of IEEE Design Automation Conference : 176 ~ 181
5. [학술지(정기간행물)] - X. Li / 2008 / Compact modeling of MOSFET wearout mechanisms for circuit- reliability simulation / IEEE Transactions on Device and Materials Reliability 8 (1) : 98 ~ 121
6. [학술대회논문] - M. Choudhury / 2010 / Analytical model for TDDB- based performance degradation in combina- tional logic / Proceeding of IEEE DATE Conference : 423 ~ 428
7. [학술대회논문] - T. Nigam / 2009 / Accurate model for time- dependent dielectric breakdown of high-k metal gate stacks / International Reliability Physics Symposium 523 (530) : 523 ~ 530
4. [학술대회논문] - J. W. McPherson / 2006 / Reliability challenges for 45nm and beyond / Proceeding of IEEE Design Automation Conference : 176 ~ 181
5. [학술지(정기간행물)] - X. Li / 2008 / Compact modeling of MOSFET wearout mechanisms for circuit- reliability simulation / IEEE Transactions on Device and Materials Reliability 8 (1) : 98 ~ 121
6. [학술대회논문] - M. Choudhury / 2010 / Analytical model for TDDB- based performance degradation in combina- tional logic / Proceeding of IEEE DATE Conference : 423 ~ 428
7. [학술대회논문] - T. Nigam / 2009 / Accurate model for time- dependent dielectric breakdown of high-k metal gate stacks / International Reliability Physics Symposium 523 (530) : 523 ~ 530
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