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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.4
- 발행연도
- 2013.8
- 수록면
- 387 - 394 (8page)
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초록· 키워드
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As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a 120 Ф cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the V<SUB>rms</SUB> and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of H<SUB>2</SUB> gas in mixed H<SUB>2</SUB>/N<SUB>2</SUB> plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing H<SUB>2</SUB> gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.
목차
Abrstact
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENTAL
Ⅲ. RESULTS & DISCUSSION
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (20)
참고문헌 신청
1. [학술대회논문] - Shijian Luo / 2010 / / UCPSS 2010
2. [학술대회논문] - Ivan L Berry / 2008 / / IWJT 2008 1 : 87 ~
3. [학술지(정기간행물)] - Keping Han / 2009 / / Microelectronic Engineering 86 : 155 ~
4. [학술지(정기간행물)] - Seung-Kook Yang / 2008 / Passivation Effect during the C4F8 + N2 Etch Process for SiOCH Low-k Films / Journal of the Korean Physical Society 52 (6) : 1786 ~ 1791
5. [학술지(정기간행물)] - Songlin Xu / 2007 / / J. Vac. Sci. Technol. B 25 : 156 ~
2. [학술대회논문] - Ivan L Berry / 2008 / / IWJT 2008 1 : 87 ~
3. [학술지(정기간행물)] - Keping Han / 2009 / / Microelectronic Engineering 86 : 155 ~
4. [학술지(정기간행물)] - Seung-Kook Yang / 2008 / Passivation Effect during the C4F8 + N2 Etch Process for SiOCH Low-k Films / Journal of the Korean Physical Society 52 (6) : 1786 ~ 1791
5. [학술지(정기간행물)] - Songlin Xu / 2007 / / J. Vac. Sci. Technol. B 25 : 156 ~
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UCI(KEPA) : I410-ECN-0101-2014-560-002404933