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논문 기본 정보

자료유형
학술저널
저자정보
유영군 (군산대학교) 정진용 (군산대학교) 주정훈 (군산대학교)
저널정보
한국표면공학회 한국표면공학회지 한국표면공학회지 제47권 제3호
발행연도
2014.6
수록면
109 - 115 (7page)

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High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power , but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported . The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas , MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, In2O3 : SnO2 composition ratio of 9 : 1 wt% target was used , Ar : O2 flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of O2 and then fixed 2 ~ 6 sccm was compared against that . The thickness of the thin film deposition is fixed at 60 nm , when the partial pressure of oxygen at 9.1%, the specific resistance value of 4.565 × 10<SUP>?4</SUP> Ωcm, transmittance 86.6%, mobility 32.29 cm2 / Vs to obtain the value

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Abstract
1. 서론
2. 실험방법
3. 실험결과 및 고찰
결론
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