Preparation of a Dense Cu(In,Ga)Se₂ Film From (In,Se)/(Cu,Ga) Stacked Precursor for CIGS Solar Cells

Seon Hong Mun; R. B. V. Chalapathy; Jin Hyung Ahn; Jung Woo Park; Ki Hwan Kim; Jae Ho Yun; Byung Tae Ahn

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저자정보: Seon Hong Mun (Korea Advanced Institute of Science and Technology) R. B. V. Chalapathy (Vel Tech High Tech Dr Rangarajan Dr Sakunthla Engineering College) Jin Hyung Ahn (Hyundai Heavy Industries Green Energy) Jung Woo Park (Hyundai Heavy Industries Green Energy) Ki Hwan Kim (Korea Institute of Energy Research) Jae Ho Yun (Korea Institute of Energy Research) Byung Tae Ahn (Korea Advanced Institute of Science and Technology)

저널정보: 한국태양광발전학회 Current Photovoltaic Research Current Photovoltaic Research Vol.7 No.1

발행연도: 2019.3

수록면: 1 - 8 (8page)

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The Cu(In,Ga)Se₂ (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to 500°C the CIGS film consisted of CIGS phase and secondary phases including In₄Se₃, InSe, and Cu<SUB>9</SUB>(In,Ga)₄. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing 450°C and subsequent Se annealing 550°C showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance.

#CIGS solar cell #(In,Se)/(Cu,Ga) precursor #Vacuum pre-annealing and selenization #Dense CIGS film #Smooth surface

참고문헌 (19)

참고문헌 신청

P. Jackson / 2016 / Effects of heavy alkali elements in Cu(In,Ga)Se2 solar cells with efficiencies up to 22.6% / Phys. Status Solidi, RRL :10583~10586

J. L. Wu / 2018 / New world record efficiency up to 22. 9% for Cu(In, Ga)(Se, S)2 thin film solar cell / 7th World Conference on Photovoltaic Energy Conversion (WCPEC-7)

B. M. Basol / 1996 / Cu(In,Ga)Se2 thin films and solar cells prepared by selenization of metallic precursors / J. Vac. Sci. Technol. A 14:2251~2256

K. Kushiya / 2008 / Interface control to enhance the fill factor over 0.70 in a large-area CIS-based thin-film PV technology / Thin Solid Films 517:2108~2110

S. Y. Hsiao / 2012 / Gong, Characteristics of Cu(In,Ga)Se2 films prepared by atmospheric pressure Selenization of Cu-In-Ga precursors using di-tert-butylselenide as Se source / J. Electrochem. Soc. 159:H378~H383

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