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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2013.1
- 수록면
- 47 - 52 (6page)
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초록· 키워드
Gold wire has long been used as a proven method of connecting a silicon die to a substrate in wide varietyof package types, delivering high yield and productivity. However, with the high price of gold, the semiconductorpackaging industry has been implementing an alternate wire material. These materials may include silver (Ag) or copper(Cu) alloys as an alternative to save material cost and maintain electrical performance. This paper will analyze and comparethe electrical characteristics of several wire types. For the study, typical 0.6 mil, 0.8 mil and 1.0 mil diameter wires wereselected from various alloy types (2N gold, Palladium (Pd) coated/doped copper, 88% and 96% silver) as well as respectivepure metallic wires for comparison. Each wire model was validated by comparing it to electromagnetic simulation resultsand measurement data. Measurements from the implemented test boards were done using a vector network analyzer (VNA)and probe station setup. The test board layout consisted of three parts: 1. Analysis of the diameter, length and materialcharacteristic of each wire; 2. Comparison between a microstrip line and the wire to microstrip line transition; and 3.
Analysis of the wire's cross-talk. These areas will be discussed in detail along with all the extracted results from eachtype the wire.
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