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논문 기본 정보

자료유형
학술저널
저자정보
Woo-Jung Lee (Electronics and Telecommunications Research Institute) Dae-Hyung Cho (Electronics and Telecommunications Research Institute) Hye-Jung Yu (Electronics and Telecommunications Research Institute) Won Seok Han (Electronics and Telecommunications Research Institute) Yong-Duck Chung (Electronics and Telecommunications Research Institute)
저널정보
한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.27 No.6
발행연도
2018.11
수록면
189 - 193 (5page)
DOI
10.5757/ASCT.2018.27.6.189

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초록· 키워드

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We fabricated Cu(In,Ga)Se₂ (CIGS) solar cells with a the chemical bath deposition-ZnS buffer layer by varying the substrate temperature for indium tin oxide (ITO) growth (T<SUB>sub.ITO</SUB>) from room temperature (RT) to 200 ℃. The CIGS solar cell efficiency increased with increasing T<SUB>sub.ITO</SUB>. After light soaking (LS), the CIGS solar cell performance improved noticeably, with a rise in fill factor, except for Tsub.ITO at RT, due to the high resistivity of ITO film. Post heat treatment (PHT) was carried out on the CIGS solar cells, in ambient air at 200 ℃, with increasing annealing time, from 10 min to 1 h. After PHT for more than 10 min, cell performance was superior to that after LS at T<SUB>sub.ITO</SUB> ≤ 100 ℃, with substantially increased cell efficiency. This was due to simultaneously enhancing the quality of the ITO film with supplementing thermal energy, and curing a defect at the p-n junction. At T<SUB>sub.ITO</SUB> ≥ 150 ℃, cell performance improved after LS, compared to after PHT, regardless of the annealing time. After LS, photoexcited carriers were generated, which was beneficial for curing defects at the p-n junction, resulting in elevating cell performance. However, after PHT, excessive thermal energy was injected into the solar cell, which induced Zn diffusion into the CIGS absorber layer, forming different defect states, such as Zn<SUB>Cu</SUB> and Zni, from the defect located at the p-n junction.

목차

Abstract
Ⅰ. Introduction
Ⅱ. Experiment
Ⅲ. Results and discussion
Ⅳ. Summary
References

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