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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.1 No.1
- 발행연도
- 1997.6
- 수록면
- 1 - 12 (12page)
이용수
초록· 키워드
오류제보하기
A new three-dimensional (3D) Monte Carlo ion implantation simulator, TRICSI, has been developed to investigate 3D mask effects in the typical mask structure for ion implantation into crystalline silicon. We present the mask comer and mask size effects of implanted boron range profiles, and also show the calculated damage distributions by applying the modified Kinchin-Pease equation in the single-crystal silicon target. The simulator calculates accurately and efficiently the implanted-boron range profiles under the relatively large implanted area, using a newly developed search algorithm for the collision partner in the single-crystal silicon. All of the typical implant parameters such as dose, tilt and rotation angles, in addition to energy can be used for the 3D simulation of ion implantation.
목차
Abstract
Ⅰ. Introduction
Ⅱ. 3D Simulation Modeling and Details
Ⅲ. Results and Discussions
Ⅳ. Conclusions
Acknowledgment
References
List of Symbols
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