Selenization of KF Premixed CuInGa Precursor and Its Impact on Solar Cell Performance

Ji‑A Oh; Yu‑Jin Song; Sung‑Wook Cho; Gyeong‑A Lee; A‑Hyun Kim; Chan‑Wook Jeon

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자료유형: 학술저널

저자정보: Ji‑A Oh (Yeungnam University) Yu‑Jin Song (Yeungnam University) Sung‑Wook Cho (Yeungnam University) Gyeong‑A Lee (Yeungnam University) A‑Hyun Kim (Yeungnam University) Chan‑Wook Jeon (Yeungnam University)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.16 No.6

발행연도: 2020.1

수록면: 548 - 555 (8page)

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K-doped Cu(In,Ga)Se2 absorber thin films were prepared by a two-step process (sputtering/selenization) using a metal precursorof a KF-premixed In/CuGa/Mo/glass structure and Se vapor. KF was deposited on top of In, between In and CuGa,and below CuGa by thermal evaporation. The properties were compared with those of a precursor without KF inserted. As an effect of KF insertion, a large electrical change was observed, i.e., the disappearance of deep-level defects, and thegrain size and Ga composition distribution of the absorber layer thin film were changed slightly. Nevertheless, there was nobenefit in terms of the solar cell performance compared to a precursor without KF inserted. The K inserted in the precursor occupied a position competitively with Na diffused from the substrate, resulting in an undesirable carrier density profile in the surface region of the absorber layer thin film.

#Cu(In #Ga)Se2 · Cu-In-Ga precursor · Na · K · MoSe2 · Selenization

참고문헌 (15)

참고문헌 신청

Lee, T. D. / 2017 / A review of thin film solar cell technologies and challenges / Renewable and Sustainable Eneregy Reviews 70:1286~1297

Tokio Nakada / 2012 / CIGS-based Thin Film Solar Cells and Modules: Unique Material Properties / Electronic Materials Letters 8(2):179~185

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