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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제19권 제3호
- 발행연도
- 2018.6
- 수록면
- 230 - 234 (5page)
- DOI
- https://doi.org/10.1007/s42341-018-0033-9
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초록· 키워드
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The objective of this study was to develop a fabrication process to realize feasible n-type GaN thinning on a 365-nm fl ipchip ultraviolet LED for enhancement of light output power. The fabrication process included isolation trench fi lling usingepoxy-based SU-8 photoresist, aligned wafer bonding, and sapphire laser lift-off techniques. Study of laser lift-off process forsuccessful transfer of the fl ip chip LED GaN epilayers to the carrier wafer using diff erent SU-8 trench fi lling methods are inprogress. The fi rst method of SU-8 trench fi lling was implemented on a fl ip chip LED wafer with chip isolation defi ned up ton-type GaN, whereas the second method of SU-8 trench fi lling was implemented on a fl ip chip LED wafer with chip isolationdefi ned down to the sapphire substrate. SU-8 2 and SU-8 2025 series were used for the fi rst and second trench fi lling methods,respectively. In addition to SU-8 trench fi lling, the second method comprised Cu electroplating and planarization polishing.
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