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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.24 No.1
- 발행연도
- 2024.2
- 수록면
- 18 - 24 (7page)
- DOI
- 10.5573/JSTS.2024.24.1.18
이용수
초록· 키워드
오류제보하기
Dynamic Random Access Memory is critical to computing for its speed and cost-effective capacity. As the demand for high-capacity memory grows, DRAM is being scaled down. However, reduced cell distances cause electrical disturbances between cells, resulting in 1-row hammer. This leads to abnormal operation and security risks. Therefore, 1-row Hammer is a major issue in modern DRAM technology. In this paper, we study the principle and impact of 1-row Hammer in DRAM, with a focus on D0 failures, a type of 1-row Hammer that causes stored data to transition from 0 to 1 due to repeated access. The mechanism involves the electron capture and diffusion of electrons affected by interfacial traps and device structures. To investigate the D0 failure, we reproduced the 1-row hammer using mixed mode to evaluate the effects on the interfacial trap and device structure changes. This research serves to improve understanding of row hammer and suggests a mitigation strategy using nitride layer. The proposed structure improves the D0 failure by about 70%, effectively improving the security vulnerability of DRAM.
목차
Abstract
I. INTRODUCTION
II. D0 FAILURE
III. RELATED RESEARCH
IV. SIMULATION CONDITION
V. SIMULATION RESULTS
VI. NITRIDE LAYER STRUCTURE
VII. CONCLUSION
REFERENCES
참고문헌 (14)
참고문헌 신청
S. K. Gautam, S. K. Manhas, A. Kumar, M. Pakala and E. Yieh, "Row Hammering Mitigation Using Metal Nanowire in Saddle Fin DRAM," in IEEE Transactions on Electron Devices, vol. 66, no. 10, pp. 4170-4175, Oct. 2019, doi: 10.1109/TED.2019.2931347.S. Ohmi et al., Ext. Abst. of AWAD2019, pp. 146-147 (2019).
Yang, Chia-Ming, et al. "Suppression of row hammer effect by doping profile modification in saddle-fin array devices for sub-30-nm DRAM technology." IEEE Transactions on Device and Materials Reliability 16.4 (2016): 685-687.
Yang, Thomas, and Xi-Wei Lin. "Trap-assisted DRAM row hammer effect." IEEE Electron Device Letters 40.3 (2019): 391-394.
Gautam, Satendra Kumar, Arvind Kumar, and Sanjeev Kumar Manhas. "Improvement of row hammering using metal nanoparticles in DRAM—A simulation study." IEEE Electron Device Letters 39.9 (2018): 1286-1289.
Van Der Veen, Victor, et al. "Drammer: Deterministic rowhammer attacks on mobile platforms." Proceedings of the 2016 ACM SIGSAC conference on computer and communications security. 2016.
Yang, Chia-Ming, et al. "Suppression of row hammer effect by doping profile modification in saddle-fin array devices for sub-30-nm DRAM technology." IEEE Transactions on Device and Materials Reliability 16.4 (2016): 685-687.
Yang, Thomas, and Xi-Wei Lin. "Trap-assisted DRAM row hammer effect." IEEE Electron Device Letters 40.3 (2019): 391-394.
Gautam, Satendra Kumar, Arvind Kumar, and Sanjeev Kumar Manhas. "Improvement of row hammering using metal nanoparticles in DRAM—A simulation study." IEEE Electron Device Letters 39.9 (2018): 1286-1289.
Van Der Veen, Victor, et al. "Drammer: Deterministic rowhammer attacks on mobile platforms." Proceedings of the 2016 ACM SIGSAC conference on computer and communications security. 2016.
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