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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2024.6
- 수록면
- 706 - 710 (5page)
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초록· 키워드
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In this paper, a three-stage dual-branch charging pump (CP) with improved dynamic gate biasing for RF energy harvesting-based ultra-low-power Internet of Things (IoT) applications is proposed. To provide high voltage to the load, a DC-DC boost converter is required to boost the low output voltage of the RF energy harvester. However, boost converters operating at low voltages supplied by ambient RF energy harvesting suffer from significantly reduced power conversion efficiency. The proposed CP achieves high efficiency at a low input voltage of 0.1V by simultaneously applying dynamic gate biasing and dynamic body biasing techniques for voltage boosting. The designed boost converter is fabricated in 180nm CMOS technology with a total flying capacitance of 92pF. Furthermore, it achieves a peak power conversion efficiency (PCE) of 47.2% at the ultra-low-input-voltage of 0.1V, which is a 27.4% improvement over the peak PCE of the conventional cross-coupled charge pumps.
목차
Abstract
Ⅰ. 서론
Ⅱ. Proposed CCCP
Ⅲ. Measurement
Ⅳ. Conclusion
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