지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials Vol.25 No.4
- 발행연도
- 2024.8
- 수록면
- 380 - 392 (13page)
- DOI
- https://doi.org/10.1007/s42341-024-00531-6
이용수
초록· 키워드
오류제보하기
Gate oxide in metal oxide semiconductor field effect transistor (MOSFET) or gate dielectric layer in thin film transistor (TFT) plays an important role in the inhibition of leakage current. Thus, high-quality of insulating properties (> 10 MV/cm) and high resistance of gate dielectric have been required. The dimension of gate oxide needs to be reduced for the amplified on-current and switching speed. However, the dimension of the oxide, developed so far, has reached its limit, and leakage current is inevitable. The structural, processing, and material methods were categorically discussed to improve insulating properties in TFT and MOSFET for leakage reduction. The parameters including threshold voltage, subthreshold swing (SS), and off current of developed devices were compared in this paper. Through advanced structure application such as GAA, capacitorless DRAM, and hybrid dielectrics, MOSFETs could be scaled down with minimum leakage current. This review paper has been divided into sections covering structural, material, and process developments that have been researched todate. After briefly explaining each of these aspects, the paper concludes by proposing the application of NO precursor as a novel reactant material, deuterium-passivation, and process parameter optimization to address the current reduction for further research.
목차
등록된 정보가 없습니다.
참고문헌 (0)
참고문헌 신청함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Solution-processed metal-oxide semiconductor field-effect transistors with polymeric gate dielectric
한국고분자학회 학술대회 연구논문 초록집
2018 .04
-
Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors
[ETRI] ETRI Journal
2022 .06
-
Linearity Analysis of MoTe 2 -FET based Single Transistor AND Gate Using Non-Equilibrium Green’s Function
Transactions on Electrical and Electronic Materials
2022 .04
-
무용매 공정과 직접 패턴이 가능한 실세스퀴옥산 탑 게이트 유기 트랜지스터용 게이트 유전체
한국섬유공학회지
2017 .01
-
Large-Area Flexible Metal-Oxide Thin-Film Transistors with Printed Organic-Inorganic Hybrid Gate Dielectrics
한국고분자학회 학술대회 연구논문 초록집
2022 .10
-
Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2022 .12
-
Fluorinated Organic-Inorganic Hybrid Polymer Gate Dielectrics for High Performance Metal Oxide Thin-Film Transistors
한국고분자학회 학술대회 연구논문 초록집
2020 .10
-
Comparative Study of Single and Double Gate All Around Cylindrical FET Structures for High-K Dielectric Materials
Transactions on Electrical and Electronic Materials
2021 .08
-
Bilayer gate dielectric with parylene material for top-gate organic field-effect transistor
한국고분자학회 학술대회 연구논문 초록집
2017 .10
-
Electrical characteristics of Zinc Oxide thin film transistor fabricated at high temperature by RF magnetron sputtering technique
Journal of Ceramic Processing Research
2017 .11
-
Analysis on Leakage Current of Gated Diode Memory Device and Suggestion of Improved Device Structure
대한전자공학회 학술대회
2022 .06
-
Surface Modification of Polymer Gate Dielectrics for Low Power in Organic Transistors
한국고분자학회 학술대회 연구논문 초록집
2018 .10
-
Exploring High-Temperature Reliability of 4H-SiC MOSFETs : A Comparative Study of High-K Gate Dielectric Materials
Transactions on Electrical and Electronic Materials
2024 .04
-
Design and Performance Analysis of Advanced MOSFET Structures
Transactions on Electrical and Electronic Materials
2022 .06
-
Analysis of Electrical Characteristics Changes Due to Physical Parameter Variations in Dual-Gate Feedback Field Effect Transistor
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2025 .02
-
Polysiloxane-Based Patternable Gate Dielectrics for Top-Gate Organic Transistors
한국고분자학회 학술대회 연구논문 초록집
2015 .04
-
The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
한국고분자학회 학술대회 연구논문 초록집
2015 .04
-
Nanohybrid gate dielectric layers with enhanced electrical performances for organic thin-film transistors
한국고분자학회 학술대회 연구논문 초록집
2016 .04
-
Thermal Evaporated Uniform High-k Gate Dielectric Layer for 2D Semiconductor Transistors
한국고분자학회 학술대회 연구논문 초록집
2023 .10
-
Low-Voltage Organic Field-Effect Transistors Using Sub-50-nm-thick Polymer Gate Dielectrics Prepared by Solution Processing
한국고분자학회 학술대회 연구논문 초록집
2022 .10
최근 본 자료
댓글(0)
0