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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.10 No.3
- 발행연도
- 2015.5
- 수록면
- 1,066 - 1,074 (9page)
이용수
초록· 키워드
오류제보하기
This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.
목차
Abstract
1. Introduction
2. A Comparison of the Reverse Recovery Characteristics in NPC Inverter
3. The Proposed Method
4. Performance Evaluation
5. Conclusion
References
참고문헌 (24)
참고문헌 신청
1. [학술지(정기간행물)] - M. Bhatnagar / 1993 / Comparison of 6HSiC, 3C-SiC and Si for power devices / IEEE Trans. Electron. Devices 40 (3) : 645 ~ 655
2. [학술지(정기간행물)] - R. Singh / 2002 / SiC power schottky and PiN diodes / IEEE Trans. Electron. Devices 49 (4) : 665 ~ 672
3. [학술대회논문] - B. Ozpineci / 2002 / Testing, characterization and modeling of SiC diodes for transportation applications / IEEE 2002Power Electronics Specialists Conference
4. [학술지(정기간행물)] - J. L. Hudgins / 2003 / An assessment of wide bandgap semiconductors for power devices / IEEE Trans. Power Electron 18 (3) : 907 ~ 914
5. [학술지(정기간행물)] - B. Ozpineci / 2003 / Characterization of SiC schottky diodes at different temperatures / IEEE Power Electronics Letters 1 (2) : 54 ~ 57
2. [학술지(정기간행물)] - R. Singh / 2002 / SiC power schottky and PiN diodes / IEEE Trans. Electron. Devices 49 (4) : 665 ~ 672
3. [학술대회논문] - B. Ozpineci / 2002 / Testing, characterization and modeling of SiC diodes for transportation applications / IEEE 2002Power Electronics Specialists Conference
4. [학술지(정기간행물)] - J. L. Hudgins / 2003 / An assessment of wide bandgap semiconductors for power devices / IEEE Trans. Power Electron 18 (3) : 907 ~ 914
5. [학술지(정기간행물)] - B. Ozpineci / 2003 / Characterization of SiC schottky diodes at different temperatures / IEEE Power Electronics Letters 1 (2) : 54 ~ 57
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