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논문 기본 정보

저자정보
(Gwangju Institute of Science and Technology) (Gwangju Institute of Science and Technology) (Sungkyunkwan University) (Gwangju Institute of Science and Technology)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.17 No.3
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    초록·키워드

    This paper presents a simple noise margin (NM) model of MOS current mode logic (MCML) gates especially in CMOS processes where a large device mismatch deteriorates logic reliability. Tradeoffs between speed and logic reliability are discussed, and a simple yet accurate NM equation to capture process-dependent degradation is proposed. The proposed NM equation is verified for 130-㎚, 110-㎚, 65-㎚, and 40-㎚ CMOS processes and has errors less than 4% for all cases.

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      UCI(KEPA) : I410-ECN-0101-2018-569-001033999