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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제1호
- 발행연도
- 2015.1
- 수록면
- 34 - 36 (3page)
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Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process,and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed byI-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealingprocess compared to air annealing treatment, because free electron was shown to be increased due to reaction ofoxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect thewet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin filmtransistors for backplane device applications.
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참고문헌 (11)
참고문헌 신청
C. Guille?n / 2007 / Structure, optical, and electrical properties of indium tin oxide thin films prepared by sputtering at room temperature and annealed in air or nitrogen /
Chuanjia Wu / 2013 / Characterization of amorphous Si-Zn-Sn-O thin films and applications in thin-film transistors / Applied Physics Letters 103 (8) : 082109 ~
Elvira M. C. Fortunato / 2008 / High mobility indium free amorphous oxide thin film transistors / Applied Physics Letters 92 (22) : 222103 ~
Eugene Chong / 2013 / First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability / Thin Solid Films 534 : 609 ~ 613
Jin-Seong Park / 2008 / Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water / Applied Physics Letters 92 (7) : 072104
Chuanjia Wu / 2013 / Characterization of amorphous Si-Zn-Sn-O thin films and applications in thin-film transistors / Applied Physics Letters 103 (8) : 082109 ~
Elvira M. C. Fortunato / 2008 / High mobility indium free amorphous oxide thin film transistors / Applied Physics Letters 92 (22) : 222103 ~
Eugene Chong / 2013 / First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability / Thin Solid Films 534 : 609 ~ 613
Jin-Seong Park / 2008 / Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water / Applied Physics Letters 92 (7) : 072104
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SnO<sub>2</sub> 박막의 열처리 온도에 따른 CO<sub>2</sub>가스 반응성
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Effect of Oxygen Pressure on Electrical Property of a-SZTO Thin Film Transistor
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Effect of RF Sputtering Power on the Electrical Properties of Si–In–Zn–O Thin Film Transistors
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Ag Layer Thickness Dependency of Electrical and Optical Properties of SiZnSnO/Ag/SiZnSnO Multilayer for High Performance and In-Free Transparent Conducting Electrode
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