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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제20권 제4호
- 발행연도
- 2019.1
- 수록면
- 371 - 374 (4page)
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We revealed a novel method to fabricate amorphous silicon-zinc-tin-oxide (a-SZTO) thin-fi lm transistors (TFTs) has been reported with transparent Indium–silicon–oxide (ISO) source/drain (S/D) electrodes. The presented TFTs exhibited a high fi eld-eff ect mobility of 14.65 cm 2 /Vs, a threshold voltage of 2.87 V, and a low subthreshold swing of 0.39 V/decade. It is suggested that the small work function of ISO (4.49 eV) compared to that of a-SZTO (4.53 eV) induces an ohmic contact at the ISO/SZTO junction, which makes it possible the eff ective injection of electrons from oxide materials into the a-SZTO semiconductor. Determine the stability of a-SZTO TFTs under Negative bias temperature stress (NBTS) was measured ΔV TH = 1.21 V at 333 K, and − 20 V for 7200 s.
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