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자료유형
학술저널
저자정보
저널정보
한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제20권 제5호
발행연도
2019.1
수록면
457 - 466 (10page)

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We present a systematic procedure to obtain the main parameters that characterize a solar cell under conditions under illumination such as: resistors series and shunt short-circuit current, fi ll factor, saturation current, saturation current diff usion and recombination, using the least square method. We have clearly demonstrated that the current approximation to use a single exponential term with a factor of n diode to describe the behavior of the p–n junction appropriate but unable to diff erentiate between the diff usion saturation currents and recombination even using too sophisticated multimeters, and measures aretaken with care. To achieve this goal the experimental measurements of the characteristic I – V , we have used the two types of silicon solar cells: mono and polycrystalline, varying light concentration. The potential applications of both single and poly-crystals are governed by the electrical properties, such as the mobility and lifetime of the carriers, which are greatly infl uenced by the defects contained in the material. The results obtained show clearly that the structural defects of the grain boundaries associated with the segregated atoms promote the recombination of minority carriers. We employ also the intensity–voltage measurement to solar cells mono and polycrystalline under illumination to understand the recombination and diff usion currents behavior at the p–n junction.

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