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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제6호
- 발행연도
- 2021.12
- 수록면
- 764 - 773 (10page)
- DOI
- https://doi.org/10.1007/s42341-021-00298-0
이용수
초록· 키워드
오류제보하기
This submitted work presents the 2-dimensional analytical modeling of Tunnel FET’s in consideration with the inherent properties of dual modulation effect. This eff ect explains the concept of regulating both gate and also the drain terminal biasing voltage on device surface potential and hence on the tunneling drain current model, which uses the device surface potential modeling as basis of deriving the TFET current model. The model is developed using basic 2-D Poisson’s equation. This analytical model embraces both the biasing voltage effect at gate and drain terminal respectively. The results procured from the submitted work are in perfect agreement with TCAD simulations results and depletion width of various regions defi ned in TFET is accurate and can also be explained theoretically.
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참고문헌 (26)
참고문헌 신청
J. W. Yang / 2005 / On the feasibility of nanoscale triple-gate CMOS transistors / IEEE Trans. Electron Dev 52(3):1159~1164
D. Nagy / 2018 / FinFET versus gate-all-around nanowire FET:performance, scaling and variability / IEEE Trans. Electron Dev 6:332~340
S. K. Sharma / 2016 / A Gaussian approach for analytical subthreshold current model of cylindrical nanowire FET with quantum mechanical eff ects / Microelectron. J 53:65~72
P. Ghosh / 2012 / An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET / Microelectronics J 43:17~24
H. Guang-Xi / 2010 / Quantum-mechanical study on surrounding gate metal oxide semiconductor FET / Commun. Theor. Phys 54(4):763
D. Nagy / 2018 / FinFET versus gate-all-around nanowire FET:performance, scaling and variability / IEEE Trans. Electron Dev 6:332~340
S. K. Sharma / 2016 / A Gaussian approach for analytical subthreshold current model of cylindrical nanowire FET with quantum mechanical eff ects / Microelectron. J 53:65~72
P. Ghosh / 2012 / An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET / Microelectronics J 43:17~24
H. Guang-Xi / 2010 / Quantum-mechanical study on surrounding gate metal oxide semiconductor FET / Commun. Theor. Phys 54(4):763
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