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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.15 No.6
- 발행연도
- 2015.12
- 수록면
- 585 - 593 (9page)
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초록· 키워드
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In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.
목차
Abstract
I. INTRODUCTION
II. DEVICE STRUCTURE AND OPERATION
III. MODEL FORMULATION
IV. RESULTS AND DISCUSSIONS
V. CONCLUSION
REFERENCES
참고문헌 (17)
참고문헌 신청
[학술지(정기간행물)] - K. K. Bhuwalka / 2005 / Simulation approach to optimize the electrical parameters of a vertical tunnel FET / IEEE Trans. Electron Devices 52 (7) : 1541 ~ 1547
[학술지(정기간행물)] - K. Boucart / 2008 / A new definition of threshold voltage in tunnel FETs / Solid State Electronics 52 (9) : 1318 ~ 1323
[학술지(정기간행물)] - K. K. Bhuwalka / 2005 / Scaling the vertical tunnel FET with tunnel band gap modulation and gate work function engineering / IEEE Trans. Electron Devices 52 (5) : 909 ~ 917
[학술지(정기간행물)] - A..S. Verhulst / 2010 / Modeling the single gate, double gate and gate all-around tunnel field effect transistor / Journal of Applied Physics 107 (2) : 024518 ~
[학술지(정기간행물)] - Q. Zhang / 2006 / Low Subthreshold Swing Tunnel Transistors / IEEE Trans. Electron Devices 27 (4) : 297 ~ 300
[학술지(정기간행물)] - K. Boucart / 2008 / A new definition of threshold voltage in tunnel FETs / Solid State Electronics 52 (9) : 1318 ~ 1323
[학술지(정기간행물)] - K. K. Bhuwalka / 2005 / Scaling the vertical tunnel FET with tunnel band gap modulation and gate work function engineering / IEEE Trans. Electron Devices 52 (5) : 909 ~ 917
[학술지(정기간행물)] - A..S. Verhulst / 2010 / Modeling the single gate, double gate and gate all-around tunnel field effect transistor / Journal of Applied Physics 107 (2) : 024518 ~
[학술지(정기간행물)] - Q. Zhang / 2006 / Low Subthreshold Swing Tunnel Transistors / IEEE Trans. Electron Devices 27 (4) : 297 ~ 300
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