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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.20 No.3
- 발행연도
- 2020.6
- 수록면
- 297 - 304 (8page)
- DOI
- 10.5573/JSTS.2020.20.3.297
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초록· 키워드
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The rapidly growth in semiconductor industry puts huge demand of scalable devices with low standby power for future VLSI chips. The further mitigation in device dimension becomes a challenging task due to the existence of unavoidable short channel effects. The introduction of gate stack and channel engineering in MOSFET devices open a new window for future generation devices. This paper presents gate stack structure with low-κ dielectric material as silicon oxide and replacement of various high-κ dielectric materials to analyze the device performance. The unification of new oxide material in the device enhances the immunity against SCEs and improves the gate leakage current. Dual-Halo Dual-Dielectric Triple Material Surrounding Gate (DH-DD-TM-SG) MOSFET has shown better performance with high dielectric constant materials. The device exhibits more value of transconductance with high-κ dielectrics.
목차
Abstract
I. INTRODUCTION
II. ANALYTICAL MODEL
III. RESULTS & DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (28)
참고문헌 신청
D. Nirmal, et al, “Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials”, Electronics, International Journal of, Vol. 100, No. 6, pp. 803-817, 2013.
P. Ghosh, et al, “An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications”, Semiconductor Technology and Science, Journal of, Vol. 12, No. 4, pp. 377-387, 2012.
P. Ghosh, et al, “An Analytical Drain Current Model for Dual Material Engineered Cylindrical/ Surrounded Gate MOSFET” Microelectronics Journal, Vol. 43, No. 1, pp. 17-24, 2012.
N. Gupta, et al, “Modeling and analysis of Threshold Voltage for Dual-Halo Dual-Dielectric Triple-Material Surrounding-Gate Metal-Oxide- Semiconductor Field-Effect Transistors”, Pure and Applied Mathematics, International Journal of, Vol. 118, No. 18, pp. 3759-3771, March, 2018
J. Robertson, “High dielectric constant oxides”, Applied Physics, The European Physical Journal, Vol. 28, No. 3, pp. 265-291, 2004.
P. Ghosh, et al, “An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications”, Semiconductor Technology and Science, Journal of, Vol. 12, No. 4, pp. 377-387, 2012.
P. Ghosh, et al, “An Analytical Drain Current Model for Dual Material Engineered Cylindrical/ Surrounded Gate MOSFET” Microelectronics Journal, Vol. 43, No. 1, pp. 17-24, 2012.
N. Gupta, et al, “Modeling and analysis of Threshold Voltage for Dual-Halo Dual-Dielectric Triple-Material Surrounding-Gate Metal-Oxide- Semiconductor Field-Effect Transistors”, Pure and Applied Mathematics, International Journal of, Vol. 118, No. 18, pp. 3759-3771, March, 2018
J. Robertson, “High dielectric constant oxides”, Applied Physics, The European Physical Journal, Vol. 28, No. 3, pp. 265-291, 2004.
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