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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제21권 제4호
- 발행연도
- 2020.1
- 수록면
- 406 - 412 (7page)
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This paper presents the design and simulation of Cantilever type RF-MEMS Capacitive shunt switch with meanders and perforations. The main objective of this paper is to reduce the pull-in voltage and increases isolation of the proposed switch. Electro-mechanics and Solid-mechanics are used to simulate the proposed switch by using COMSOL Multiphysics software. The capacitance, switching time, stress analysis are calculated and compare both theoretical and simulation results of the proposed switch. By varying diff erent beam thickness, materials, an air gap between the beam and signal line to calculate spring constant and pull-in voltage. The proposed switch having pull-in voltage is 1.371 V, the dielectric material Si 3 N 4 is to improve the capacitance analysis of the switch. The up and downstate capacitance is 7.073 fF, 1.259 pF. The RF performance is simulated by using Ansoft HFSS tool, the switch performs at low frequencies at 1?4 GHz range. The return (S 11 ) and insertion loss (S 12 ) of the proposed switch is ? 30 dB, ? 0.0516 dB and the switch having good isolation (S 21 ) is ? 37.5 dB at 1.5 GHz frequency. The switch is suitable for radar and satellite communication applications.
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참고문헌 (15)
참고문헌 신청
Z. Chen / 2017 / Effect of surface asperities on the capacitances of capacitive RF MEMS switches / J. Micromech. Microeng 27:034002
S. Molaei / 2017 / Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation / Microsyst. Technol 23:1907~1912
Y. Liu / 2017 / High-power high-isolation RF-MEMS switches with enhanced hot-switching reliability using a shunt protection technique / IEEE Trans. Microw. Theory Tech 65:3188~3199
S. Molaei / 2017 / Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation / Microsyst. Technol 23(6):1907~1912
A. Persano / 2016 / Infl uence of design and fabrication on RF performance of capacitive RF MEMS switches / Microsyst. Technol 22:1741~1746
S. Molaei / 2017 / Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation / Microsyst. Technol 23:1907~1912
Y. Liu / 2017 / High-power high-isolation RF-MEMS switches with enhanced hot-switching reliability using a shunt protection technique / IEEE Trans. Microw. Theory Tech 65:3188~3199
S. Molaei / 2017 / Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation / Microsyst. Technol 23(6):1907~1912
A. Persano / 2016 / Infl uence of design and fabrication on RF performance of capacitive RF MEMS switches / Microsyst. Technol 22:1741~1746
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